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| Parameter | PBLS1501V,115 | PBLS1501Y,115 | |
|---|---|---|---|
IC package | Package | SS Mini-6 (SOT-666) | SC-70-6, SC-88, SOT-323-6, SOT-363 |
Manufacturer | Manufacturer | NXP Semiconductors | |
Continuous collector current | IC | <500 mA | |
Constant power dissipated on the transistor collector | PC | <200 mW | <300 mW |
Static current transfer coefficient of bipolar transistor | hFE | >200Ic, Vce = 10mA, 2V | |
Saturation voltage between collector and emitter of transistor | UCE-sat | <150 mVIb, Ic = 10mA, 200mA | |
Limit frequency of current transfer coefficient of a bipolar transistor | fh21 | (not set) | <280 MHz |
Bipolar transistor structure | Structure | 1 NPN, 1 PNP - Pre-Biased (Dual) | |
Collector cutoff current | Ifrc | 100 nA | |
Number of elements of the same type in single chip | Elements | 2 | |
Resistance, connected to base | RB | 2.2 kΩ | |
Resistance between emitter and base | RE-B | 2.2 kΩ | |
Saturation voltage between collector and emitter of 2nd transistor | UCE-sat2 | <150 mVIb, Ic = 500µA, 10mA | |
Static current transfer coefficient of 2nd bipolar transistor | hFE2 | >30Ic, Vce = 20mA, 5V | |