NSTB60

NSTB60, NSTB60BDW1T1, NSTB60BDW1T1G

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Description

Parameters

ParameterNSTB60BDW1T1NSTB60BDW1T1G
IC package
Package
SC-70-6, SC-88, SOT-323-6, SOT-363
Manufacturer
Manufacturer
ON Semiconductor
Continuous collector current
IC
<150 mA
Voltage between the collector and the emitter of the transistor with an open base circuit and a given emitter current
UCEO
<50 V
Constant power dissipated on the transistor collector
PC
<250 mW
Static current transfer coefficient of bipolar transistor
hFE
>120Ic, Vce = 5mA, 10V
Saturation voltage between collector and emitter of transistor
UCE-sat
<500 mVIb, Ic = 5mA, 50mA
Limit frequency of current transfer coefficient of a bipolar transistor
fh21
<140 MHz
Bipolar transistor structure
Structure
1 NPN, 1 PNP - Pre-Biased (Dual)1 NPN Prebiased, 1 PNP
Collector cutoff current
Ifrc
500 nA
Number of elements of the same type in single chip
Elements
2
Resistance, connected to base
RB
22 kΩ
Resistance between emitter and base
RE-B
47 kΩ
Saturation voltage between collector and emitter of 2nd transistor
UCE-sat2
<250 mVIb, Ic = 5mA, 10mA
Static current transfer coefficient of 2nd bipolar transistor
hFE2
>80Ic, Vce = 5mA, 10V