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| Parameter | NSTB1002DXV5T1G | |
|---|---|---|
IC package | Package | SOT-553, SOT-5 |
Manufacturer | Manufacturer | ON Semiconductor |
Continuous collector current | IC | <100 mA |
Constant power dissipated on the transistor collector | PC | <500 mW |
Static current transfer coefficient of bipolar transistor | hFE | >100Ic, Vce = 10mA, 1V |
Saturation voltage between collector and emitter of transistor | UCE-sat | <250 mVIb, Ic = 1mA, 10mA |
Limit frequency of current transfer coefficient of a bipolar transistor | fh21 | <250 MHz |
Bipolar transistor structure | Structure | 1 NPN, 1 PNP - Pre-Biased (Dual) |
Collector cutoff current | Ifrc | 500 nA |
Number of elements of the same type in single chip | Elements | 2 |
Resistance, connected to base | RB | 47 kΩ |
Resistance between emitter and base | RE-B | 47 kΩ |
Continuous collector current of 2nd transistor | IC2 | <200 mA |