NSBC143EDXV6T1

NSBC143, NSBC143EDP6T5G, NSBC143EDXV6T1, NSBC143EDXV6T1G, NSBC143EF3T5G, NSBC143EPDXV6T1, NSBC143EPDXV6T1G, NSBC143TDXV6T1, NSBC143TDXV6T1G, NSBC143TPDXV6T1, NSBC143TPDXV6T1G, NSBC143ZDP6T5G, NSBC143ZDXV6T1, NSBC143ZDXV6T1G, NSBC143ZF3T5G, NSBC143ZPDP6T5G, NSBC143ZPDXV6T1G, NSBC143ZPDXV6T5, NSBC143ZPDXV6T5G

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Description

Parameters

ParameterNSBC143EDP6T5GNSBC143EDXV6T1NSBC143EDXV6T1GNSBC143EF3T5GNSBC143EPDXV6T1NSBC143EPDXV6T1GNSBC143TDXV6T1NSBC143TDXV6T1GNSBC143TPDXV6T1NSBC143TPDXV6T1GNSBC143ZDP6T5GNSBC143ZDXV6T1NSBC143ZDXV6T1GNSBC143ZF3T5GNSBC143ZPDP6T5GNSBC143ZPDXV6T1GNSBC143ZPDXV6T5NSBC143ZPDXV6T5G
IC package
Package
SOT-963SOT-563SOT-563SOT-1123SOT-563SOT-563SOT-563SOT-563SOT-563SOT-563SOT-963SOT-563SOT-563SOT-1123SOT-963SOT-563SOT-563SOT-563
Manufacturer
Manufacturer
ON Semiconductor
Continuous collector current
IC
(not set)<100 mA<100 mA(not set)<100 mA<100 mA<100 mA<100 mA<100 mA<100 mA(not set)<100 mA<100 mA(not set)(not set)<100 mA<100 mA<100 mA
Voltage between the collector and the emitter of the transistor with an open base circuit and a given emitter current
UCEO
(not set)<50 V<50 V(not set)<50 V<50 V<50 V<50 V<50 V<50 V(not set)<50 V<50 V(not set)(not set)<50 V<50 V<50 V
Constant power dissipated on the transistor collector
PC
(not set)<500 mW<500 mW(not set)<500 mW<500 mW<500 mW<500 mW<500 mW<500 mW(not set)<500 mW<500 mW(not set)(not set)<500 mW<500 mW<500 mW
Static current transfer coefficient of bipolar transistor
hFE
(not set)>15Ic, Vce = 5mA, 10V>15Ic, Vce = 5mA, 10V(not set)>15Ic, Vce = 5mA, 10V>15Ic, Vce = 5mA, 10V>160Ic, Vce = 5mA, 10V>160Ic, Vce = 5mA, 10V>160Ic, Vce = 5mA, 10V>160Ic, Vce = 5mA, 10V(not set)>80Ic, Vce = 5mA, 10V>80Ic, Vce = 5mA, 10V(not set)(not set)>80Ic, Vce = 5mA, 10V>80Ic, Vce = 5mA, 10V>80Ic, Vce = 5mA, 10V
Saturation voltage between collector and emitter of transistor
UCE-sat
(not set)<250 mVIb, Ic = 1mA, 10mA<250 mVIb, Ic = 1mA, 10mA(not set)<250 mVIb, Ic = 1mA, 10mA<250 mVIb, Ic = 1mA, 10mA<250 mVIb, Ic = 5mA, 10mA<250 mVIb, Ic = 5mA, 10mA<250 mVIb, Ic = 300µA, 10mA<250 mVIb, Ic = 300µA, 10mA(not set)<250 mVIb, Ic = 1mA, 10mA<250 mVIb, Ic = 1mA, 10mA(not set)(not set)<250 mVIb, Ic = 1mA, 10mA<250 mVIb, Ic = 1mA, 10mA<250 mVIb, Ic = 1mA, 10mA
Bipolar transistor structure
Structure
(not set)NPN Pre-BiasedNPN Pre-Biased(not set)1 NPN, 1 PNP - Pre-Biased (Dual)1 NPN, 1 PNP - Pre-Biased (Dual)NPN Pre-BiasedNPN Pre-Biased1 NPN, 1 PNP - Pre-Biased (Dual)1 NPN, 1 PNP - Pre-Biased (Dual)(not set)NPN Pre-BiasedNPN Pre-Biased(not set)(not set)1 NPN, 1 PNP - Pre-Biased (Dual)1 NPN, 1 PNP - Pre-Biased (Dual)1 NPN, 1 PNP - Pre-Biased (Dual)
Collector cutoff current
Ifrc
(not set)500 nA500 nA(not set)500 nA500 nA500 nA500 nA500 nA500 nA(not set)500 nA500 nA(not set)(not set)500 nA500 nA500 nA
Number of elements of the same type in single chip
Elements
2
Resistance, connected to base
RB
(not set)4.7 kΩ4.7 kΩ(not set)4.7 kΩ4.7 kΩ4.7 kΩ4.7 kΩ4.7 kΩ4.7 kΩ(not set)4.7 kΩ4.7 kΩ(not set)(not set)4.7 kΩ4.7 kΩ4.7 kΩ
Resistance between emitter and base
RE-B
(not set)4.7 kΩ4.7 kΩ(not set)4.7 kΩ4.7 kΩ(not set)(not set)(not set)(not set)(not set)47 kΩ47 kΩ(not set)(not set)47 kΩ47 kΩ47 kΩ