NSBC124EDXV6T1

NSBC124, NSBC124EDP6T5G, NSBC124EDXV6T1, NSBC124EDXV6T1G, NSBC124EDXV6T5G, NSBC124EF3T5G, NSBC124EPDXV6T1, NSBC124EPDXV6T1G, NSBC124EPDXV6T5G, NSBC124XDXV6T1, NSBC124XDXV6T1G, NSBC124XPDXV6T1G

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Description

Parameters

ParameterNSBC124EDP6T5GNSBC124EDXV6T1NSBC124EDXV6T1GNSBC124EDXV6T5GNSBC124EF3T5GNSBC124EPDXV6T1NSBC124EPDXV6T1GNSBC124EPDXV6T5GNSBC124XDXV6T1NSBC124XDXV6T1GNSBC124XPDXV6T1G
IC package
Package
SOT-963SOT-563SOT-563SOT-563SOT-1123SOT-563SOT-563SOT-563SOT-563SOT-563SOT-563
Manufacturer
Manufacturer
ON Semiconductor
Continuous collector current
IC
(not set)<100 mA<100 mA<100 mA(not set)<100 mA<100 mA<100 mA<100 mA<100 mA<100 mA
Voltage between the collector and the emitter of the transistor with an open base circuit and a given emitter current
UCEO
(not set)<50 V<50 V<50 V(not set)<50 V<50 V<50 V<50 V<50 V<50 V
Constant power dissipated on the transistor collector
PC
(not set)<500 mW<500 mW<500 mW(not set)<500 mW<500 mW<500 mW<500 mW<500 mW<500 mW
Static current transfer coefficient of bipolar transistor
hFE
(not set)>60Ic, Vce = 5mA, 10V>60Ic, Vce = 5mA, 10V>60Ic, Vce = 5mA, 10V(not set)>60Ic, Vce = 5mA, 10V>60Ic, Vce = 5mA, 10V>60Ic, Vce = 5mA, 10V>80Ic, Vce = 5mA, 10V>80Ic, Vce = 5mA, 10V>80Ic, Vce = 5mA, 10V
Saturation voltage between collector and emitter of transistor
UCE-sat
(not set)<250 mVIb, Ic = 300µA, 10mA<250 mVIb, Ic = 300µA, 10mA<250 mVIb, Ic = 300µA, 10mA(not set)<250 mVIb, Ic = 300µA, 10mA<250 mVIb, Ic = 300µA, 10mA<250 mVIb, Ic = 300µA, 10mA<250 mVIb, Ic = 1mA, 10mA<250 mVIb, Ic = 1mA, 10mA<250 mVIb, Ic = 1mA, 10mA
Bipolar transistor structure
Structure
(not set)NPN Pre-BiasedNPN Pre-BiasedNPN Pre-Biased(not set)1 NPN, 1 PNP - Pre-Biased (Dual)1 NPN, 1 PNP - Pre-Biased (Dual)1 NPN, 1 PNP - Pre-Biased (Dual)NPN Pre-BiasedNPN Pre-Biased1 NPN, 1 PNP - Pre-Biased (Dual)
Collector cutoff current
Ifrc
(not set)500 nA500 nA500 nA(not set)500 nA500 nA500 nA500 nA500 nA500 nA
Number of elements of the same type in single chip
Elements
2
Resistance, connected to base
RB
(not set)22 kΩ22 kΩ22 kΩ(not set)22 kΩ22 kΩ22 kΩ22 kΩ22 kΩ22 kΩ
Resistance between emitter and base
RE-B
(not set)22 kΩ22 kΩ22 kΩ(not set)22 kΩ22 kΩ22 kΩ47 kΩ47 kΩ47 kΩ