NSBC123EDXV6T1

NSBC123, NSBC123EDXV6T1, NSBC123EDXV6T1G, NSBC123EPDXV6T1, NSBC123EPDXV6T1G, NSBC123JDP6T5G, NSBC123JDXV6T1, NSBC123JDXV6T1G, NSBC123JDXV6T5, NSBC123JDXV6T5G, NSBC123JF3T5G, NSBC123JPDP6T5G, NSBC123JPDXV6T1, NSBC123JPDXV6T1G, NSBC123JPDXV6T5G, NSBC123TDP6T5G, NSBC123TF3T5G

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Description

Parameters

ParameterNSBC123EDXV6T1NSBC123EDXV6T1GNSBC123EPDXV6T1NSBC123EPDXV6T1GNSBC123JDP6T5GNSBC123JDXV6T1NSBC123JDXV6T1GNSBC123JDXV6T5NSBC123JDXV6T5GNSBC123JF3T5GNSBC123JPDP6T5GNSBC123JPDXV6T1NSBC123JPDXV6T1GNSBC123JPDXV6T5GNSBC123TDP6T5GNSBC123TF3T5G
IC package
Package
SOT-563SOT-563SOT-563SOT-563SOT-963SOT-563SOT-563SOT-563SOT-563SOT-1123SOT-963SOT-563SOT-563SOT-563SOT-963SOT-1123
Manufacturer
Manufacturer
ON Semiconductor
Continuous collector current
IC
<100 mA<100 mA<100 mA<100 mA(not set)<100 mA<100 mA<100 mA<100 mA(not set)(not set)<100 mA<100 mA<100 mA(not set)(not set)
Voltage between the collector and the emitter of the transistor with an open base circuit and a given emitter current
UCEO
<50 V<50 V<50 V<50 V(not set)<50 V<50 V<50 V<50 V(not set)(not set)<50 V<50 V<50 V(not set)(not set)
Constant power dissipated on the transistor collector
PC
<500 mW<500 mW<500 mW<500 mW(not set)<500 mW<500 mW<500 mW<500 mW(not set)(not set)<500 mW<500 mW<500 mW(not set)(not set)
Static current transfer coefficient of bipolar transistor
hFE
>8Ic, Vce = 5mA, 10V>8Ic, Vce = 5mA, 10V>8Ic, Vce = 5mA, 10V>8Ic, Vce = 5mA, 10V(not set)>80Ic, Vce = 5mA, 10V>80Ic, Vce = 5mA, 10V>80Ic, Vce = 5mA, 10V>80Ic, Vce = 5mA, 10V(not set)(not set)>80Ic, Vce = 5mA, 10V>80Ic, Vce = 5mA, 10V>80Ic, Vce = 5mA, 10V(not set)(not set)
Saturation voltage between collector and emitter of transistor
UCE-sat
<250 mVIb, Ic = 5mA, 10mA<250 mVIb, Ic = 5mA, 10mA<250 mVIb, Ic = 5mA, 10mA<250 mVIb, Ic = 5mA, 10mA(not set)<250 mVIb, Ic = 300µA, 10mA<250 mVIb, Ic = 300µA, 10mA<250 mVIb, Ic = 300µA, 10mA<250 mVIb, Ic = 300µA, 10mA(not set)(not set)<250 mVIb, Ic = 300µA, 10mA<250 mVIb, Ic = 300µA, 10mA<250 mVIb, Ic = 300µA, 10mA(not set)(not set)
Bipolar transistor structure
Structure
NPN Pre-BiasedNPN Pre-Biased1 NPN, 1 PNP - Pre-Biased (Dual)1 NPN, 1 PNP - Pre-Biased (Dual)(not set)NPN Pre-BiasedNPN Pre-BiasedNPN Pre-BiasedNPN Pre-Biased(not set)(not set)1 NPN, 1 PNP - Pre-Biased (Dual)1 NPN, 1 PNP - Pre-Biased (Dual)1 NPN, 1 PNP - Pre-Biased (Dual)(not set)(not set)
Collector cutoff current
Ifrc
500 nA500 nA500 nA500 nA(not set)500 nA500 nA500 nA500 nA(not set)(not set)500 nA500 nA500 nA(not set)(not set)
Number of elements of the same type in single chip
Elements
2
Resistance, connected to base
RB
2.2 kΩ2.2 kΩ2.2 kΩ2.2 kΩ(not set)2.2 kΩ2.2 kΩ2.2 kΩ2.2 kΩ(not set)(not set)2.2 kΩ2.2 kΩ2.2 kΩ(not set)(not set)
Resistance between emitter and base
RE-B
2.2 kΩ2.2 kΩ2.2 kΩ2.2 kΩ(not set)47 kΩ47 kΩ47 kΩ47 kΩ(not set)(not set)47 kΩ47 kΩ47 kΩ(not set)(not set)