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| Parameter | NSBC115EDXV6T1G | NSBC115TDP6T5G | NSBC115TF3T5G | NSBC115TPDP6T5G | |
|---|---|---|---|---|---|
IC package | Package | SOT-563 | SOT-963 | SOT-1123 | SOT-963 |
Manufacturer | Manufacturer | ON Semiconductor | |||
Continuous collector current | IC | <100 mA | (not set) | (not set) | <100 mA |
Voltage between the collector and the emitter of the transistor with an open base circuit and a given emitter current | UCEO | <50 V | (not set) | (not set) | <50 V |
Constant power dissipated on the transistor collector | PC | <500 mW | (not set) | (not set) | <408 mW |
Static current transfer coefficient of bipolar transistor | hFE | >80Ic, Vce = 5mA, 10V | (not set) | (not set) | >160Ic, Vce = 5mA, 10V |
Saturation voltage between collector and emitter of transistor | UCE-sat | (not set) | (not set) | (not set) | <250 mVIb, Ic = 1mA, 10mA |
Bipolar transistor structure | Structure | NPN Pre-Biased | (not set) | (not set) | 1 NPN, 1 PNP - Pre-Biased (Dual) |
Collector cutoff current | Ifrc | 500 nA | (not set) | (not set) | 500 nA |
Number of elements of the same type in single chip | Elements | 2 | |||
Resistance, connected to base | RB | 100 kΩ | (not set) | (not set) | 100 kΩ |
Resistance between emitter and base | RE-B | 100 kΩ | (not set) | (not set) | (not set) |