NSBC113

NSBC113, NSBC113EDXV6T1, NSBC113EDXV6T1G, NSBC113EDXV6T5, NSBC113EPDXV6T1

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Description

Parameters

ParameterNSBC113EDXV6T1NSBC113EDXV6T1GNSBC113EDXV6T5NSBC113EPDXV6T1
IC package
Package
SOT-563
Manufacturer
Manufacturer
ON Semiconductor
Continuous collector current
IC
<100 mA
Voltage between the collector and the emitter of the transistor with an open base circuit and a given emitter current
UCEO
<50 V
Constant power dissipated on the transistor collector
PC
<500 mW
Static current transfer coefficient of bipolar transistor
hFE
>3Ic, Vce = 5mA, 10V
Saturation voltage between collector and emitter of transistor
UCE-sat
<250 mVIb, Ic = 5mA, 10mA
Bipolar transistor structure
Structure
NPN Pre-BiasedNPN Pre-BiasedNPN Pre-Biased1 NPN, 1 PNP - Pre-Biased (Dual)
Collector cutoff current
Ifrc
500 nA
Number of elements of the same type in single chip
Elements
2
Resistance, connected to base
RB
1 kΩ
Resistance between emitter and base
RE-B
1 kΩ