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| Parameter | NSBA124EDP6T5G | NSBA124EDXV6T1 | NSBA124EDXV6T1G | NSBA124EF3T5G | NSBA124XDXV6T1 | |
|---|---|---|---|---|---|---|
IC package | Package | SOT-963 | SOT-563 | SOT-563 | SOT-1123 | SOT-563 |
Manufacturer | Manufacturer | ON Semiconductor | ||||
Continuous collector current | IC | (not set) | <100 mA | <100 mA | (not set) | <100 mA |
Voltage between the collector and the emitter of the transistor with an open base circuit and a given emitter current | UCEO | (not set) | <50 V | <50 V | (not set) | <50 V |
Constant power dissipated on the transistor collector | PC | (not set) | <500 mW | <500 mW | (not set) | <500 mW |
Static current transfer coefficient of bipolar transistor | hFE | (not set) | >60Ic, Vce = 5mA, 10V | >60Ic, Vce = 5mA, 10V | (not set) | >80Ic, Vce = 5mA, 10V |
Saturation voltage between collector and emitter of transistor | UCE-sat | (not set) | <250 mVIb, Ic = 300µA, 10mA | <250 mVIb, Ic = 300µA, 10mA | (not set) | <250 mVIb, Ic = 1mA, 10mA |
Bipolar transistor structure | Structure | PNP Pre-Biased | ||||
Collector cutoff current | Ifrc | (not set) | 500 nA | 500 nA | (not set) | 500 nA |
Number of elements of the same type in single chip | Elements | 2 | ||||
Resistance, connected to base | RB | (not set) | 22 kΩ | 22 kΩ | (not set) | 22 kΩ |
Resistance between emitter and base | RE-B | (not set) | 22 kΩ | 22 kΩ | (not set) | 47 kΩ |