NSBA123EDXV6T1G

NSBA123, NSBA123EDXV6T1, NSBA123EDXV6T1G, NSBA123JDP6T5G, NSBA123JDXV6T1, NSBA123JDXV6T1G, NSBA123JDXV6T5G, NSBA123JF3T5G, NSBA123TDP6T5G, NSBA123TF3T5G

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Description

Parameters

ParameterNSBA123EDXV6T1NSBA123EDXV6T1GNSBA123JDP6T5GNSBA123JDXV6T1NSBA123JDXV6T1GNSBA123JDXV6T5GNSBA123JF3T5GNSBA123TDP6T5GNSBA123TF3T5G
IC package
Package
SOT-563SOT-563SOT-963SOT-563SOT-563SOT-563SOT-1123SOT-963SOT-1123
Manufacturer
Manufacturer
ON Semiconductor
Continuous collector current
IC
<100 mA<100 mA(not set)<100 mA<100 mA<100 mA(not set)(not set)(not set)
Voltage between the collector and the emitter of the transistor with an open base circuit and a given emitter current
UCEO
<50 V<50 V(not set)<50 V<50 V<50 V(not set)(not set)(not set)
Constant power dissipated on the transistor collector
PC
<500 mW<500 mW(not set)<500 mW<500 mW<500 mW(not set)(not set)(not set)
Static current transfer coefficient of bipolar transistor
hFE
>8Ic, Vce = 5mA, 10V>8Ic, Vce = 5mA, 10V(not set)>80Ic, Vce = 5mA, 10V>80Ic, Vce = 5mA, 10V>80Ic, Vce = 5mA, 10V(not set)(not set)(not set)
Saturation voltage between collector and emitter of transistor
UCE-sat
<250 mVIb, Ic = 300µA, 10mA<250 mVIb, Ic = 300µA, 10mA(not set)<250 mVIb, Ic = 300µA, 10mA<250 mVIb, Ic = 300µA, 10mA<250 mVIb, Ic = 300µA, 10mA(not set)(not set)(not set)
Bipolar transistor structure
Structure
PNP Pre-Biased
Collector cutoff current
Ifrc
500 nA500 nA(not set)500 nA500 nA500 nA(not set)(not set)(not set)
Number of elements of the same type in single chip
Elements
2
Resistance, connected to base
RB
2.2 kΩ2.2 kΩ(not set)2.2 kΩ2.2 kΩ2.2 kΩ(not set)(not set)(not set)
Resistance between emitter and base
RE-B
2.2 kΩ2.2 kΩ(not set)47 kΩ47 kΩ47 kΩ(not set)(not set)(not set)