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| Parameter | NSBA115EDXV6T1G | NSBA115TDP6T5G | NSBA115TF3T5G | |
|---|---|---|---|---|
IC package | Package | SOT-563 | SOT-963 | SOT-1123 |
Manufacturer | Manufacturer | ON Semiconductor | ||
Continuous collector current | IC | <100 mA | (not set) | (not set) |
Voltage between the collector and the emitter of the transistor with an open base circuit and a given emitter current | UCEO | <50 V | (not set) | (not set) |
Constant power dissipated on the transistor collector | PC | <500 mW | (not set) | (not set) |
Static current transfer coefficient of bipolar transistor | hFE | >80Ic, Vce = 5mA, 10V | (not set) | (not set) |
Bipolar transistor structure | Structure | PNP Pre-Biased | ||
Collector cutoff current | Ifrc | 500 nA | (not set) | (not set) |
Number of elements of the same type in single chip | Elements | 2 | ||
Resistance, connected to base | RB | 100 kΩ | (not set) | (not set) |
Resistance between emitter and base | RE-B | 100 kΩ | (not set) | (not set) |