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| Parameter | NP0G3D200A | |
|---|---|---|
IC package | Package | SSS Mini 6 |
Manufacturer | Manufacturer | Panasonic - SSG |
Continuous collector current | IC | <80 mA |
Voltage between the collector and the emitter of the transistor with an open base circuit and a given emitter current | UCEO | <50 V |
Constant power dissipated on the transistor collector | PC | <125 mW |
Static current transfer coefficient of bipolar transistor | hFE | >80.2Ic, Vce = 5mA, 10V |
Saturation voltage between collector and emitter of transistor | UCE-sat | <250 mVIb, Ic = 300µA, 10mA |
Limit frequency of current transfer coefficient of a bipolar transistor | fh21 | <80 MHz |
Bipolar transistor structure | Structure | 1 NPN, 1 PNP - Pre-Biased (Dual) |
Collector cutoff current | Ifrc | 500 nA |
Number of elements of the same type in single chip | Elements | 2 |
Limit frequency of current transfer coefficient of 2nd bipolar transistor | fh212 | <150 MHz |