MUN5335DW1T1G

MUN5335, MUN5335DW1T1, MUN5335DW1T1G, MUN5335DW1T2, MUN5335DW1T2G

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Description

Parameters

ParameterMUN5335DW1T1MUN5335DW1T1GMUN5335DW1T2MUN5335DW1T2G
IC package
Package
SC-70-6, SC-88, SOT-323-6, SOT-363
Manufacturer
Manufacturer
ON Semiconductor
Continuous collector current
IC
<100 mA
Voltage between the collector and the emitter of the transistor with an open base circuit and a given emitter current
UCEO
<50 V
Constant power dissipated on the transistor collector
PC
<385 mW<385 mW(not set)(not set)
Static current transfer coefficient of bipolar transistor
hFE
>80Ic, Vce = 5mA, 10V
Saturation voltage between collector and emitter of transistor
UCE-sat
<250 mVIb, Ic = 300µA, 10mA<250 mVIb, Ic = 300µA, 10mA(not set)(not set)
Bipolar transistor structure
Structure
1 NPN, 1 PNP - Pre-Biased (Dual)
Collector cutoff current
Ifrc
500 nA500 nA(not set)(not set)
Number of elements of the same type in single chip
Elements
2
Resistance, connected to base
RB
2.2 kΩ
Resistance between emitter and base
RE-B
47 kΩ