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| Parameter | IMD10AT108 | |
|---|---|---|
IC package | Package | SC-74-6 |
Manufacturer | Manufacturer | Rohm Semiconductor |
Continuous collector current | IC | <100 mA |
Voltage between the collector and the emitter of the transistor with an open base circuit and a given emitter current | UCEO | <50 V |
Constant power dissipated on the transistor collector | PC | <300 mW |
Static current transfer coefficient of bipolar transistor | hFE | >68Ic, Vce = 100mA, 5V |
Saturation voltage between collector and emitter of transistor | UCE-sat | <300 mVIb, Ic = 5mA, 100mA |
Limit frequency of current transfer coefficient of a bipolar transistor | fh21 | <200 MHz |
Bipolar transistor structure | Structure | 1 NPN, 1 PNP - Pre-Biased (Dual) |
Number of elements of the same type in single chip | Elements | 2 |
Resistance between emitter and base | RE-B | 100 kΩ |
Saturation voltage between collector and emitter of 2nd transistor | UCE-sat2 | <300 mVIb, Ic = 1mA, 10mA |
Static current transfer coefficient of 2nd bipolar transistor | hFE2 | >100Ic, Vce = 1mA, 5V |
Continuous collector current of 2nd transistor | IC2 | <500 mA |
Limit frequency of current transfer coefficient of 2nd bipolar transistor | fh212 | <250 MHz |