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| Parameter | EMF5T2R | EMF5XV6T5 | EMF5XV6T5G | |
|---|---|---|---|---|
IC package | Package | EMT6 | SOT-563 | SOT-563 |
Manufacturer | Manufacturer | Rohm Semiconductor | ON Semiconductor | ON Semiconductor |
Continuous collector current | IC | <100 mA | ||
Constant power dissipated on the transistor collector | PC | <150 mW | <500 mW | <500 mW |
Static current transfer coefficient of bipolar transistor | hFE | >270Ic, Vce = 10mA, 2V | >80Ic, Vce = 5mA, 10V | >80Ic, Vce = 5mA, 10V |
Saturation voltage between collector and emitter of transistor | UCE-sat | <250 mVIb, Ic = 10mA, 200mA | <250 mVIb, Ic = 300µA, 10mA | <250 mVIb, Ic = 300µA, 10mA |
Limit frequency of current transfer coefficient of a bipolar transistor | fh21 | <250 MHz | (not set) | (not set) |
Bipolar transistor structure | Structure | 1 NPN, 1 PNP - Pre-Biased (Dual) | 1 NPN, 1 PNP - Pre-Biased (Dual) | 1 NPN Prebiased, 1 PNP |
Collector cutoff current | Ifrc | (not set) | 500 nA | 500 nA |
Number of elements of the same type in single chip | Elements | 2 | ||
Resistance, connected to base | RB | 47 kΩ | ||
Resistance between emitter and base | RE-B | 47 kΩ | ||
Saturation voltage between collector and emitter of 2nd transistor | UCE-sat2 | <300 mVIb, Ic = 500µA, 10mA | <250 mVIb, Ic = 10mA, 200mA | <250 mVIb, Ic = 10mA, 200mA |
Static current transfer coefficient of 2nd bipolar transistor | hFE2 | >68Ic, Vce = 5mA, 5V | >270Ic, Vce = 10mA, 2V | >270Ic, Vce = 10mA, 2V |
Continuous collector current of 2nd transistor | IC2 | <500 mA | <1 A | <1 A |
Limit frequency of current transfer coefficient of 2nd bipolar transistor | fh212 | <260 MHz | (not set) | (not set) |