This page is planned to add content in the near future.
Please, hit "Vote" button if you interested in it, so we can know which pages must be filled out first of all. Up to 10 votes per day are accepted from one IP address
| Parameter | EMF22T2R | |
|---|---|---|
IC package | Package | EMT6 |
Manufacturer | Manufacturer | Rohm Semiconductor |
Continuous collector current | IC | <100 mA |
Constant power dissipated on the transistor collector | PC | <150 mW |
Static current transfer coefficient of bipolar transistor | hFE | >270Ic, Vce = 10mA, 2V |
Saturation voltage between collector and emitter of transistor | UCE-sat | <250 mVIb, Ic = 10mA, 200mA |
Limit frequency of current transfer coefficient of a bipolar transistor | fh21 | <250 MHz |
Bipolar transistor structure | Structure | 1 NPN, 1 PNP - Pre-Biased (Dual) |
Number of elements of the same type in single chip | Elements | 2 |
Resistance, connected to base | RB | 10 kΩ |
Resistance between emitter and base | RE-B | 10 kΩ |
Saturation voltage between collector and emitter of 2nd transistor | UCE-sat2 | <300 mVIb, Ic = 500µA, 10mA |
Static current transfer coefficient of 2nd bipolar transistor | hFE2 | >30Ic, Vce = 5mA, 5V |
Continuous collector current of 2nd transistor | IC2 | <500 mA |
Limit frequency of current transfer coefficient of 2nd bipolar transistor | fh212 | <320 MHz |