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| Parameter | EMF21-7 | EMF21T2R | |
|---|---|---|---|
IC package | Package | SOT-563 | EMT6 |
Manufacturer | Manufacturer | Diodes Inc | Rohm Semiconductor |
Continuous collector current | IC | <500 mA | <100 mA |
Constant power dissipated on the transistor collector | PC | <300 mW | <150 mW |
Static current transfer coefficient of bipolar transistor | hFE | >270Ic, Vce = 10mA, 2V | |
Saturation voltage between collector and emitter of transistor | UCE-sat | <250 mVIb, Ic = 10mA, 200mA | |
Limit frequency of current transfer coefficient of a bipolar transistor | fh21 | <280 MHz | <250 MHz |
Bipolar transistor structure | Structure | 1 NPN Prebiased, 1 PNP | 1 NPN, 1 PNP - Pre-Biased (Dual) |
Number of elements of the same type in single chip | Elements | 2 | |
Resistance, connected to base | RB | 10 kΩ | |
Resistance between emitter and base | RE-B | 10 kΩ | |
Saturation voltage between collector and emitter of 2nd transistor | UCE-sat2 | <300 mVIb, Ic = 500µA, 10mA | |
Static current transfer coefficient of 2nd bipolar transistor | hFE2 | >30Ic, Vce = 5mA, 5V | |
Continuous collector current of 2nd transistor | IC2 | <100 mA | <500 mA |
Limit frequency of current transfer coefficient of 2nd bipolar transistor | fh212 | <250 MHz | <260 MHz |