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| Parameter | EMF18XV6T5G | |
|---|---|---|
IC package | Package | SOT-563 |
Manufacturer | Manufacturer | ON Semiconductor |
Continuous collector current | IC | <100 mA |
Constant power dissipated on the transistor collector | PC | <500 mW |
Static current transfer coefficient of bipolar transistor | hFE | >80Ic, Vce = 5mA, 10V |
Saturation voltage between collector and emitter of transistor | UCE-sat | <250 mVIb, Ic = 300µA, 10mA |
Limit frequency of current transfer coefficient of a bipolar transistor | fh21 | <140 MHz |
Bipolar transistor structure | Structure | 1 NPN, 1 PNP - Pre-Biased (Dual) |
Number of elements of the same type in single chip | Elements | 2 |
Resistance, connected to base | RB | 47 kΩ |
Resistance between emitter and base | RE-B | 47 kΩ |
Saturation voltage between collector and emitter of 2nd transistor | UCE-sat2 | <500 mVIb, Ic = 5mA, 50mA |
Static current transfer coefficient of 2nd bipolar transistor | hFE2 | >120Ic, Vce = 1mA, 6V |