This page is planned to add content in the near future.
Please, hit "Vote" button if you interested in it, so we can know which pages must be filled out first of all. Up to 10 votes per day are accepted from one IP address
| Parameter | EMD9T2R | |
|---|---|---|
IC package | Package | EMT6 |
Manufacturer | Manufacturer | Rohm Semiconductor |
Continuous collector current | IC | <100 mA |
Voltage between the collector and the emitter of the transistor with an open base circuit and a given emitter current | UCEO | <50 V |
Constant power dissipated on the transistor collector | PC | <150 mW |
Static current transfer coefficient of bipolar transistor | hFE | >68Ic, Vce = 5mA, 5V |
Saturation voltage between collector and emitter of transistor | UCE-sat | <300 mVIb, Ic = 250µA, 5mA |
Limit frequency of current transfer coefficient of a bipolar transistor | fh21 | <250 MHz |
Bipolar transistor structure | Structure | 1 NPN, 1 PNP - Pre-Biased (Dual) |
Number of elements of the same type in single chip | Elements | 2 |
Resistance, connected to base | RB | 10 kΩ |
Resistance between emitter and base | RE-B | 47 kΩ |