This page is planned to add content in the near future.
Please, hit "Vote" button if you interested in it, so we can know which pages must be filled out first of all. Up to 10 votes per day are accepted from one IP address
| Parameter | EMD5DXV6T1 | EMD5DXV6T1G | EMD5DXV6T5G | EMD5T2R | |
|---|---|---|---|---|---|
IC package | Package | SOT-563 | SOT-563 | SOT-563 | EMT6 |
Manufacturer | Manufacturer | ON Semiconductor | ON Semiconductor | ON Semiconductor | Rohm Semiconductor |
Continuous collector current | IC | <100 mA | |||
Voltage between the collector and the emitter of the transistor with an open base circuit and a given emitter current | UCEO | <50 V | |||
Constant power dissipated on the transistor collector | PC | <500 mW | <500 mW | <500 mW | <150 mW |
Static current transfer coefficient of bipolar transistor | hFE | >20.8Ic, Vce = 5mA, 10V | >20.8Ic, Vce = 5mA, 10V | >20Ic, Vce = 5mA, 10V | >68Ic, Vce = 5mA, 5V |
Saturation voltage between collector and emitter of transistor | UCE-sat | <250 mVIb, Ic = 300µA, 10mA | <250 mVIb, Ic = 300µA, 10mA | <250 mVIb, Ic = 300µA, 10mA | <300 mVIb, Ic = 500µA, 10mA, |
Limit frequency of current transfer coefficient of a bipolar transistor | fh21 | (not set) | (not set) | (not set) | <250 MHz |
Bipolar transistor structure | Structure | 1 NPN, 1 PNP - Pre-Biased (Dual) | |||
Collector cutoff current | Ifrc | 500 nA | 500 nA | 500 nA | (not set) |
Number of elements of the same type in single chip | Elements | 2 | |||
Resistance, connected to base | RB | 4.7 kΩ | 4.7 kΩ | (not set) | (not set) |
Resistance between emitter and base | RE-B | 10 kΩ | 10 kΩ | (not set) | (not set) |
Static current transfer coefficient of 2nd bipolar transistor | hFE2 | (not set) | (not set) | >80Ic, Vce = 5mA, 10V | >30Ic, Vce = 10mA, 5V |