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| Parameter | EMD4DXV6T1G | EMD4DXV6T5G | EMD4T2R | |
|---|---|---|---|---|
IC package | Package | SOT-563 | SOT-563 | EMT6 |
Manufacturer | Manufacturer | ON Semiconductor | ON Semiconductor | Rohm Semiconductor |
Continuous collector current | IC | <100 mA | ||
Voltage between the collector and the emitter of the transistor with an open base circuit and a given emitter current | UCEO | <50 V | ||
Constant power dissipated on the transistor collector | PC | <500 mW | <500 mW | <150 mW |
Static current transfer coefficient of bipolar transistor | hFE | >80Ic, Vce = 5mA, 10V | >80Ic, Vce = 5mA, 10V | >68Ic, Vce = 5mA, 5V |
Saturation voltage between collector and emitter of transistor | UCE-sat | <250 mVIb, Ic = 300µA, 10mA | <250 mVIb, Ic = 300µA, 10mA | <300 mVIb, Ic = 500µA, 10mA |
Limit frequency of current transfer coefficient of a bipolar transistor | fh21 | (not set) | (not set) | <250 MHz |
Bipolar transistor structure | Structure | 1 NPN, 1 PNP - Pre-Biased (Dual) | ||
Collector cutoff current | Ifrc | 500 nA | 500 nA | (not set) |
Number of elements of the same type in single chip | Elements | 2 | ||
Resistance, connected to base | RB | 10 kΩ | 10 kΩ | (not set) |
Resistance between emitter and base | RE-B | 2.1 kΩ | 2.1 kΩ | (not set) |
Saturation voltage between collector and emitter of 2nd transistor | UCE-sat2 | (not set) | (not set) | <300 mVIb, Ic = 250µA, 5mA |