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| Parameter | EMD29T2R | |
|---|---|---|
IC package | Package | EMT6 |
Manufacturer | Manufacturer | Rohm Semiconductor |
Continuous collector current | IC | <500 mA |
Constant power dissipated on the transistor collector | PC | <150 mW |
Static current transfer coefficient of bipolar transistor | hFE | >140Ic, Vce = 100mA, 2V |
Saturation voltage between collector and emitter of transistor | UCE-sat | <300 mVIb, Ic = 5mA, 100mA |
Limit frequency of current transfer coefficient of a bipolar transistor | fh21 | <260 MHz |
Bipolar transistor structure | Structure | 1 NPN, 1 PNP - Pre-Biased (Dual) |
Number of elements of the same type in single chip | Elements | 2 |
Saturation voltage between collector and emitter of 2nd transistor | UCE-sat2 | <300 mVIb, Ic = 500µA, 10mA |
Static current transfer coefficient of 2nd bipolar transistor | hFE2 | >30Ic, Vce = 5mA, 5V |
Continuous collector current of 2nd transistor | IC2 | <100 mA |
Limit frequency of current transfer coefficient of 2nd bipolar transistor | fh212 | <250 MHz |