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| Parameter | EMA6DXV5T1 | EMA6DXV5T1G | EMA6DXV5T5G | |
|---|---|---|---|---|
IC package | Package | SOT-553, SOT-5 | ||
Manufacturer | Manufacturer | ON Semiconductor | ||
Continuous collector current | IC | <100 mA | ||
Voltage between the collector and the emitter of the transistor with an open base circuit and a given emitter current | UCEO | <50 V | ||
Constant power dissipated on the transistor collector | PC | <338 mW | ||
Static current transfer coefficient of bipolar transistor | hFE | >160Ic, Vce = 5mA, 10V | ||
Saturation voltage between collector and emitter of transistor | UCE-sat | <250 mVIb, Ic = 1mA, 10mA | ||
Bipolar transistor structure | Structure | PNP Pre-Biased | ||
Collector cutoff current | Ifrc | 500 nA | ||
Number of elements of the same type in single chip | Elements | 2 | ||
Resistance, connected to base | RB | 47 kΩ | ||