DIMD10A-7

DIMD10, DIMD10A-7

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Description

Parameters

ParameterDIMD10A-7
IC package
Package
SC-74R
Manufacturer
Manufacturer
Diodes Inc
Continuous collector current
IC
<500 mA
Voltage between the collector and the emitter of the transistor with an open base circuit and a given emitter current
UCEO
<50 V
Constant power dissipated on the transistor collector
PC
<300 mW
Static current transfer coefficient of bipolar transistor
hFE
>68.1Ic, Vce = 1mA, 5V
Saturation voltage between collector and emitter of transistor
UCE-sat
<300 mVIb, Ic = 5mA, 100mA
Limit frequency of current transfer coefficient of a bipolar transistor
fh21
<200 MHz
Bipolar transistor structure
Structure
1 NPN, 1 PNP - Pre-Biased (Dual)
Number of elements of the same type in single chip
Elements
2
Resistance between emitter and base
RE-B
10 kΩ
Saturation voltage between collector and emitter of 2nd transistor
UCE-sat2
<300 mVIb, Ic = 1mA, 10mA
Continuous collector current of 2nd transistor
IC2
<100 mA
Limit frequency of current transfer coefficient of 2nd bipolar transistor
fh212
<250 MHz