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| Parameter | DEMD48-7 | |
|---|---|---|
IC package | Package | SOT-563 |
Manufacturer | Manufacturer | Diodes Inc |
Continuous collector current | IC | <100 mA |
Voltage between the collector and the emitter of the transistor with an open base circuit and a given emitter current | UCEO | <50 V |
Constant power dissipated on the transistor collector | PC | <300 mW |
Static current transfer coefficient of bipolar transistor | hFE | >80Ic, Vce = 5mA, 5V |
Saturation voltage between collector and emitter of transistor | UCE-sat | <150 mVIb, Ic = 500µA, 10mA |
Bipolar transistor structure | Structure | 1 NPN, 1 PNP - Pre-Biased (Dual) |
Number of elements of the same type in single chip | Elements | 2 |
Saturation voltage between collector and emitter of 2nd transistor | UCE-sat2 | <100 mVIb, Ic = 250µA, 5mA |
Static current transfer coefficient of 2nd bipolar transistor | hFE2 | >100Ic, Vce = 10mA, 5V |