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| Parameter | BCR183SE6327 | BCR183SE6433 | BCR183UE6327 | |
|---|---|---|---|---|
IC package | Package | SC-70-6, SC-88, SOT-323-6, SOT-363 | SC-70-6, SC-88, SOT-323-6, SOT-363 | SC-74-6 |
Manufacturer | Manufacturer | Infineon Technologies | ||
Continuous collector current | IC | <100 mA | ||
Voltage between the collector and the emitter of the transistor with an open base circuit and a given emitter current | UCEO | <50 V | ||
Constant power dissipated on the transistor collector | PC | <250 mW | ||
Static current transfer coefficient of bipolar transistor | hFE | >30Ic, Vce = 5mA, 5V | ||
Saturation voltage between collector and emitter of transistor | UCE-sat | <300 mVIb, Ic = 500µA, 10mA | ||
Limit frequency of current transfer coefficient of a bipolar transistor | fh21 | <200 MHz | ||
Bipolar transistor structure | Structure | PNP Pre-Biased | ||
Number of elements of the same type in single chip | Elements | 2 | ||
Resistance, connected to base | RB | 10 kΩ | ||
Resistance between emitter and base | RE-B | 10 kΩ | ||