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| Parameter | PDTB113EK,115 | PDTB113ES,126 | PDTB113ET,215 | PDTB113ZK,115 | PDTB113ZS,126 | PDTB113ZT,215 | |
|---|---|---|---|---|---|---|---|
IC package | Package | SC-59-3, SMT3, SOT-346, TO-236 | TO-92-3 (Standard Body), TO-226 | SOT-23-3, TO-236-3, Micro3™, SSD3, SST3 | SC-59-3, SMT3, SOT-346, TO-236 | TO-92-3 (Standard Body), TO-226 | SOT-23-3, TO-236-3, Micro3™, SSD3, SST3 |
Manufacturer | Manufacturer | NXP Semiconductors | |||||
Type of mounting a component on a board/circuit | Mount | Surface mount | Through-hole | Surface mount | Surface mount | Through-hole | Surface mount |
Continuous collector current | IC | <500 mA | |||||
Voltage between the collector and the emitter of the transistor with an open base circuit and a given emitter current | UCEO | <50 V | |||||
Constant power dissipated on the transistor collector | PC | <250 mW | <500 mW | <250 mW | <250 mW | <500 mW | <250 mW |
Static current transfer coefficient of bipolar transistor | hFE | >33Ic, Vce = 50mA, 5V | >33Ic, Vce = 50mA, 5V | >33Ic, Vce = 50mA, 5V | >70Ic, Vce = 50mA, 5V | >70Ic, Vce = 50mA, 5V | >70Ic, Vce = 50mA, 5V |
Saturation voltage between collector and emitter of transistor | UCE-sat | <300 mVIb, Ic = 2.5mA, 50mA | |||||
Bipolar transistor structure | Structure | PNP Pre-Biased | |||||
Collector cutoff current | Ifrc | 500 nA | |||||
Resistance, connected to base | RB | 1 kΩ | |||||
Resistance between emitter and base | RE-B | 1 kΩ | 1 kΩ | 1 kΩ | 10 kΩ | 10 kΩ | 10 kΩ |