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| Parameter | PDTA124EE,115 | PDTA124EK,115 | PDTA124EM,315 | PDTA124ES,126 | PDTA124ET,215 | PDTA124EU,115 | PDTA124EU,135 | PDTA124TE,115 | PDTA124TK,115 | PDTA124TM,315 | PDTA124TS,126 | PDTA124TT,215 | PDTA124TU,115 | PDTA124XE,115 | PDTA124XK,115 | PDTA124XM,315 | PDTA124XS,126 | PDTA124XT,215 | PDTA124XU,115 | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
IC package | Package | EMT3 (SOT-416, SC-75-3) | SC-59-3, SMT3, SOT-346, TO-236 | SC-101, SOT-883 | TO-92-3 (Standard Body), TO-226 | SOT-23-3, TO-236-3, Micro3™, SSD3, SST3 | SC-70-3, SOT-323-3 | SC-70-3, SOT-323-3 | EMT3 (SOT-416, SC-75-3) | SC-59-3, SMT3, SOT-346, TO-236 | SC-101, SOT-883 | TO-92-3 (Standard Body), TO-226 | SOT-23-3, TO-236-3, Micro3™, SSD3, SST3 | SC-70-3, SOT-323-3 | EMT3 (SOT-416, SC-75-3) | SC-59-3, SMT3, SOT-346, TO-236 | SC-101, SOT-883 | TO-92-3 (Standard Body), TO-226 | SOT-23-3, TO-236-3, Micro3™, SSD3, SST3 | SC-70-3, SOT-323-3 |
Manufacturer | Manufacturer | NXP Semiconductors | ||||||||||||||||||
Type of mounting a component on a board/circuit | Mount | Surface mount | Surface mount | Surface mount | Through-hole | Surface mount | Surface mount | Surface mount | Surface mount | Surface mount | Surface mount | Through-hole | Surface mount | Surface mount | Surface mount | Surface mount | Surface mount | Through-hole | Surface mount | Surface mount |
Continuous collector current | IC | <100 mA | ||||||||||||||||||
Voltage between the collector and the emitter of the transistor with an open base circuit and a given emitter current | UCEO | <50 V | ||||||||||||||||||
Constant power dissipated on the transistor collector | PC | <150 mW | <150 mW | <250 mW | <500 mW | <250 mW | <200 mW | <200 mW | <150 mW | <250 mW | <250 mW | <500 mW | <250 mW | <200 mW | <150 mW | <250 mW | <250 mW | <500 mW | <250 mW | <200 mW |
Static current transfer coefficient of bipolar transistor | hFE | >60Ic, Vce = 5mA, 5V | >60Ic, Vce = 5mA, 5V | >60Ic, Vce = 5mA, 5V | >60Ic, Vce = 5mA, 5V | >60Ic, Vce = 5mA, 5V | >60Ic, Vce = 5mA, 5V | >60Ic, Vce = 5mA, 5V | >60Ic, Vce = 5mA, 5V | >60Ic, Vce = 5mA, 5V | >60Ic, Vce = 5mA, 5V | >100Ic, Vce = 1mA, 5V | >60Ic, Vce = 5mA, 5V | >60Ic, Vce = 5mA, 5V | >80Ic, Vce = 5mA, 5V | >80Ic, Vce = 5mA, 5V | >60Ic, Vce = 5mA, 5V | >80Ic, Vce = 5mA, 5V | >80Ic, Vce = 5mA, 5V | >80Ic, Vce = 5mA, 5V |
Saturation voltage between collector and emitter of transistor | UCE-sat | <150 mVIb, Ic = 500µA, 10mA | ||||||||||||||||||
Bipolar transistor structure | Structure | NPN Pre-Biased | NPN Pre-Biased | PNP Pre-Biased | NPN Pre-Biased | NPN Pre-Biased | NPN Pre-Biased | NPN Pre-Biased | PNP Pre-Biased | PNP Pre-Biased | PNP Pre-Biased | PNP Pre-Biased | PNP Pre-Biased | PNP Pre-Biased | PNP Pre-Biased | PNP Pre-Biased | PNP Pre-Biased | PNP Pre-Biased | PNP Pre-Biased | PNP Pre-Biased |
Collector cutoff current | Ifrc | 1 µA | ||||||||||||||||||
Resistance, connected to base | RB | 22 kΩ | ||||||||||||||||||
Resistance between emitter and base | RE-B | 22 kΩ | 22 kΩ | 22 kΩ | 22 kΩ | 22 kΩ | 22 kΩ | 22 kΩ | 22 kΩ | 22 kΩ | 22 kΩ | (not set) | 22 kΩ | 22 kΩ | 47 kΩ | 47 kΩ | 22 kΩ | 47 kΩ | 47 kΩ | 47 kΩ |