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| Parameter | PDTA113EE,115 | PDTA113EK,115 | PDTA113EM,315 | PDTA113ES,126 | PDTA113ET,215 | PDTA113EU,115 | PDTA113ZE,115 | PDTA113ZK,115 | PDTA113ZM,315 | PDTA113ZS,126 | PDTA113ZT,215 | PDTA113ZU,115 | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
IC package | Package | EMT3 (SOT-416, SC-75-3) | SC-59-3, SMT3, SOT-346, TO-236 | SC-101, SOT-883 | TO-92-3 (Standard Body), TO-226 | SOT-23-3, TO-236-3, Micro3™, SSD3, SST3 | SC-70-3, SOT-323-3 | EMT3 (SOT-416, SC-75-3) | SC-59-3, SMT3, SOT-346, TO-236 | SC-101, SOT-883 | TO-92-3 (Standard Body), TO-226 | SOT-23-3, TO-236-3, Micro3™, SSD3, SST3 | SC-70-3, SOT-323-3 |
Manufacturer | Manufacturer | NXP Semiconductors | |||||||||||
Type of mounting a component on a board/circuit | Mount | Surface mount | Surface mount | Surface mount | Through-hole | Surface mount | Surface mount | Surface mount | Surface mount | Surface mount | Through-hole | Surface mount | Surface mount |
Continuous collector current | IC | <100 mA | |||||||||||
Voltage between the collector and the emitter of the transistor with an open base circuit and a given emitter current | UCEO | <50 V | |||||||||||
Constant power dissipated on the transistor collector | PC | <150 mW | <250 mW | <250 mW | <500 mW | <250 mW | <200 mW | <150 mW | <250 mW | <250 mW | <500 mW | <250 mW | <200 mW |
Static current transfer coefficient of bipolar transistor | hFE | >30Ic, Vce = 40mA, 5V | >30Ic, Vce = 40mA, 5V | >30Ic, Vce = 40mA, 5V | >30Ic, Vce = 40mA, 5V | >30Ic, Vce = 40mA, 5V | >30Ic, Vce = 40mA, 5V | >35Ic, Vce = 5mA, 5V | >35Ic, Vce = 5mA, 5V | >35Ic, Vce = 5mA, 5V | >35Ic, Vce = 5mA, 5V | >35Ic, Vce = 5mA, 5V | >35Ic, Vce = 5mA, 5V |
Saturation voltage between collector and emitter of transistor | UCE-sat | <150 mVIb, Ic = 1.5mA, 30mA | <150 mVIb, Ic = 1.5mA, 30mA | <150 mVIb, Ic = 1.5mA, 30mA | <150 mVIb, Ic = 1.5mA, 30mA | <150 mVIb, Ic = 1.5mA, 30mA | <150 mVIb, Ic = 1.5mA, 30mA | <150 mVIb, Ic = 500µA, 10mA | <150 mVIb, Ic = 500µA, 10mA | <150 mVIb, Ic = 500µA, 10mA | <150 mVIb, Ic = 500µA, 10mA | <150 mVIb, Ic = 500µA, 10mA | <150 mVIb, Ic = 500µA, 10mA |
Bipolar transistor structure | Structure | PNP Pre-Biased | |||||||||||
Collector cutoff current | Ifrc | 1 µA | |||||||||||
Resistance, connected to base | RB | 1 kΩ | |||||||||||
Resistance between emitter and base | RE-B | 1 kΩ | 1 kΩ | 1 kΩ | 1 kΩ | 1 kΩ | 1 kΩ | 10 kΩ | 10 kΩ | 10 kΩ | 10 kΩ | 10 kΩ | 10 kΩ |