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| Parameter | PBRP113ES,126 | PBRP113ET,215 | PBRP113ZS,126 | PBRP113ZT,215 | |
|---|---|---|---|---|---|
IC package | Package | TO-92-3 (Standard Body), TO-226 | SOT-23-3, TO-236-3, Micro3™, SSD3, SST3 | TO-92-3 (Standard Body), TO-226 | SOT-23-3, TO-236-3, Micro3™, SSD3, SST3 |
Manufacturer | Manufacturer | NXP Semiconductors | |||
Type of mounting a component on a board/circuit | Mount | Through-hole | Surface mount | Through-hole | Surface mount |
Continuous collector current | IC | <800 mA | |||
Voltage between the collector and the emitter of the transistor with an open base circuit and a given emitter current | UCEO | <50 V | <40 V | <50 V | <40 V |
Constant power dissipated on the transistor collector | PC | <500 mW | <570 mW | <500 mW | <570 mW |
Static current transfer coefficient of bipolar transistor | hFE | (not set) | >40Ic, Vce = 50mA, 5V | (not set) | >230Ic, Vce = 300mA, 5V |
Saturation voltage between collector and emitter of transistor | UCE-sat | (not set) | <300 mVIb, Ic = 10mA, 500mA | (not set) | <200 mVIb, Ic = 10mA, 500mA |
Bipolar transistor structure | Structure | PNP Pre-Biased | |||
Collector cutoff current | Ifrc | (not set) | 500 nA | (not set) | 500 nA |
Resistance, connected to base | RB | 1 kΩ | |||
Resistance between emitter and base | RE-B | 1 kΩ | 1 kΩ | 10 kΩ | 10 kΩ |