PBRN123ES,126

PBRN123, PBRN123EK,115, PBRN123ES,126, PBRN123ET,215, PBRN123YK,115, PBRN123YS,126, PBRN123YT,215

This page is planned to add content in the near future.

Please, hit "Vote" button if you interested in it, so we can know which pages must be filled out first of all. Up to 10 votes per day are accepted from one IP address

Description

Parameters

ParameterPBRN123EK,115PBRN123ES,126PBRN123ET,215PBRN123YK,115PBRN123YS,126PBRN123YT,215
IC package
Package
SC-59-3, SMT3, SOT-346, TO-236TO-92-3 (Standard Body), TO-226SOT-23-3, TO-236-3, Micro3™, SSD3, SST3SC-59-3, SMT3, SOT-346, TO-236TO-92-3 (Standard Body), TO-226SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
Manufacturer
Manufacturer
NXP Semiconductors
Type of mounting a component on a board/circuit
Mount
Surface mountThrough-holeSurface mountSurface mountThrough-holeSurface mount
Continuous collector current
IC
<600 mA<800 mA<600 mA<600 mA<800 mA<600 mA
Voltage between the collector and the emitter of the transistor with an open base circuit and a given emitter current
UCEO
<40 V
Constant power dissipated on the transistor collector
PC
<570 mW<700 mW<570 mW<570 mW<700 mW<570 mW
Static current transfer coefficient of bipolar transistor
hFE
>280Ic, Vce = 300mA, 5V>280Ic, Vce = 300mA, 5V>280Ic, Vce = 300mA, 5V>500Ic, Vce = 300mA, 5V>500Ic, Vce = 300mA, 5V>500Ic, Vce = 300mA, 5V
Saturation voltage between collector and emitter of transistor
UCE-sat
<160 mVIb, Ic = 10mA, 500mA
Bipolar transistor structure
Structure
NPN Pre-Biased
Collector cutoff current
Ifrc
500 nA
Resistance, connected to base
RB
2.2 kΩ
Resistance between emitter and base
RE-B
2.2 kΩ2.2 kΩ2.2 kΩ480 Ω480 Ω480 Ω