PBRN113

PBRN113, PBRN113EK,115, PBRN113ES,126, PBRN113ET,215, PBRN113ZK,115, PBRN113ZS,126, PBRN113ZT,215

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Description

Parameters

ParameterPBRN113EK,115PBRN113ES,126PBRN113ET,215PBRN113ZK,115PBRN113ZS,126PBRN113ZT,215
IC package
Package
SC-59-3, SMT3, SOT-346, TO-236TO-92-3 (Standard Body), TO-226SOT-23-3, TO-236-3, Micro3™, SSD3, SST3SC-59-3, SMT3, SOT-346, TO-236TO-92-3 (Standard Body), TO-226SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
Manufacturer
Manufacturer
NXP Semiconductors
Type of mounting a component on a board/circuit
Mount
Surface mountThrough-holeSurface mountSurface mountThrough-holeSurface mount
Continuous collector current
IC
<600 mA<600 mA<600 mA<600 mA<800 mA<600 mA
Voltage between the collector and the emitter of the transistor with an open base circuit and a given emitter current
UCEO
<40 V
Constant power dissipated on the transistor collector
PC
<570 mW<700 mW<570 mW<570 mW<700 mW<570 mW
Static current transfer coefficient of bipolar transistor
hFE
>180Ic, Vce = 300mA, 5V>180Ic, Vce = 300mA, 5V>180Ic, Vce = 300mA, 5V>500Ic, Vce = 300mA, 5V>500Ic, Vce = 300mA, 5V>500Ic, Vce = 300mA, 5V
Saturation voltage between collector and emitter of transistor
UCE-sat
<220 mVIb, Ic = 10mA, 500mA<220 mVIb, Ic = 10mA, 500mA<220 mVIb, Ic = 10mA, 500mA<160 mVIb, Ic = 10mA, 500mA<160 mVIb, Ic = 10mA, 500mA<160 mVIb, Ic = 10mA, 500mA
Bipolar transistor structure
Structure
NPN Pre-Biased
Collector cutoff current
Ifrc
500 nA
Resistance, connected to base
RB
1 kΩ
Resistance between emitter and base
RE-B
1 kΩ1 kΩ1 kΩ10 kΩ10 kΩ10 kΩ