NSBC114YF3T5G

NSBC114, NSBC114EF3T5G, NSBC114YF3T5G

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Description

Parameters

ParameterNSBC114EF3T5GNSBC114YF3T5G
IC package
Package
SOT-1123
Manufacturer
Manufacturer
ON Semiconductor
Type of mounting a component on a board/circuit
Mount
Surface mount
Continuous collector current
IC
<100 mA
Voltage between the collector and the emitter of the transistor with an open base circuit and a given emitter current
UCEO
<50 V
Constant power dissipated on the transistor collector
PC
<254 mW
Static current transfer coefficient of bipolar transistor
hFE
>35Ic, Vce = 5mA, 10V>80Ic, Vce = 5mA, 10V
Saturation voltage between collector and emitter of transistor
UCE-sat
<250 mVIb, Ic = 300µA, 10mA<250 mVIb, Ic = 1mA, 10mA
Bipolar transistor structure
Structure
NPN Pre-Biased
Collector cutoff current
Ifrc
500 nA
Resistance, connected to base
RB
10 kΩ
Resistance between emitter and base
RE-B
10 kΩ47 kΩ