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| Parameter | MUN5211T1 | MUN5211T1G | |
|---|---|---|---|
IC package | Package | SC-70-3, SOT-323-3 | |
Manufacturer | Manufacturer | ON Semiconductor | |
Type of mounting a component on a board/circuit | Mount | Surface mount | |
Continuous collector current | IC | <100 mA | |
Voltage between the collector and the emitter of the transistor with an open base circuit and a given emitter current | UCEO | <50 V | |
Constant power dissipated on the transistor collector | PC | <310 mW | |
Static current transfer coefficient of bipolar transistor | hFE | >35Ic, Vce = 5mA, 10V | |
Saturation voltage between collector and emitter of transistor | UCE-sat | <250 mVIb, Ic = 300µA, 10mA | |
Bipolar transistor structure | Structure | NPN Pre-Biased | |
Collector cutoff current | Ifrc | 500 nA | |
Resistance, connected to base | RB | 10 kΩ | |
Resistance between emitter and base | RE-B | 10 kΩ | |