MUN5113T1

MUN5113, MUN5113T1, MUN5113T1G, MUN5113T3, MUN5113T3G

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Description

Parameters

ParameterMUN5113T1MUN5113T1GMUN5113T3MUN5113T3G
IC package
Package
SC-70-6, SC-88, SOT-323-6, SOT-363
Manufacturer
Manufacturer
ON Semiconductor
Type of mounting a component on a board/circuit
Mount
Surface mount
Continuous collector current
IC
<100 mA
Voltage between the collector and the emitter of the transistor with an open base circuit and a given emitter current
UCEO
<50 V
Constant power dissipated on the transistor collector
PC
<310 mW
Static current transfer coefficient of bipolar transistor
hFE
>80Ic, Vce = 5mA, 10V
Saturation voltage between collector and emitter of transistor
UCE-sat
<250 mVIb, Ic = 300µA, 10mA
Bipolar transistor structure
Structure
PNP Pre-Biased
Collector cutoff current
Ifrc
500 nA
Resistance, connected to base
RB
47 kΩ
Resistance between emitter and base
RE-B
47 kΩ