MUN2211JT1

MUN2211, MUN2211JT1, MUN2211JT1G, MUN2211T1, MUN2211T1G, MUN2211T3, MUN2211T3G

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Description

Parameters

ParameterMUN2211JT1MUN2211JT1GMUN2211T1MUN2211T1GMUN2211T3MUN2211T3G
IC package
Package
SC-59-3, SMT3, SOT-346, TO-236
Manufacturer
Manufacturer
ON Semiconductor
Type of mounting a component on a board/circuit
Mount
Surface mount
Continuous collector current
IC
<100 mA
Voltage between the collector and the emitter of the transistor with an open base circuit and a given emitter current
UCEO
<50 V
Constant power dissipated on the transistor collector
PC
<2.7 W<2.7 W<338 mW<338 mW<338 mW<338 mW
Static current transfer coefficient of bipolar transistor
hFE
>35Ic, Vce = 5mA, 10V
Saturation voltage between collector and emitter of transistor
UCE-sat
<250 mVIb, Ic = 300µA, 10mA
Bipolar transistor structure
Structure
NPN Pre-Biased
Collector cutoff current
Ifrc
500 nA
Resistance, connected to base
RB
10 kΩ
Resistance between emitter and base
RE-B
10 kΩ