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| Parameter | MMUN2111LT1 | MMUN2111LT1G | MMUN2111LT3G | |
|---|---|---|---|---|
IC package | Package | SOT-23-3, TO-236-3, Micro3™, SSD3, SST3 | ||
Manufacturer | Manufacturer | ON Semiconductor | ||
Type of mounting a component on a board/circuit | Mount | Surface mount | ||
Continuous collector current | IC | <100 mA | ||
Voltage between the collector and the emitter of the transistor with an open base circuit and a given emitter current | UCEO | <50 V | ||
Constant power dissipated on the transistor collector | PC | <400 mW | ||
Static current transfer coefficient of bipolar transistor | hFE | >35Ic, Vce = 5mA, 10V | ||
Saturation voltage between collector and emitter of transistor | UCE-sat | <250 mVIb, Ic = 300µA, 10mA | ||
Bipolar transistor structure | Structure | PNP Pre-Biased | ||
Collector cutoff current | Ifrc | 500 nA | ||
Resistance, connected to base | RB | 10 kΩ | ||
Resistance between emitter and base | RE-B | 10 kΩ | ||