DTB114

DTB114, DTB114EKT146, DTB114ESTP, DTB114GKT146, DTB114TKT146

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Description

Parameters

ParameterDTB114EKT146DTB114ESTPDTB114GKT146DTB114TKT146
IC package
Package
SC-59-3, SMT3, SOT-346, TO-236SC-72-3, SPTSC-59-3, SMT3, SOT-346, TO-236SC-59-3, SMT3, SOT-346, TO-236
Manufacturer
Manufacturer
Rohm Semiconductor
Type of mounting a component on a board/circuit
Mount
Surface mountThrough-holeSurface mountSurface mount
Continuous collector current
IC
<500 mA
Voltage between the collector and the emitter of the transistor with an open base circuit and a given emitter current
UCEO
<50 V
Constant power dissipated on the transistor collector
PC
<200 mW<300 mW<200 mW<200 mW
Static current transfer coefficient of bipolar transistor
hFE
>56Ic, Vce = 50mA, 5V>56Ic, Vce = 50mA, 5V>56Ic, Vce = 50mA, 5V>100Ic, Vce = 50mA, 5V
Saturation voltage between collector and emitter of transistor
UCE-sat
<300 mVIb, Ic = 2.5mA, 50mA
Limit frequency of current transfer coefficient of a bipolar transistor
fh21
<200 MHz
Bipolar transistor structure
Structure
PNP Pre-Biased
Resistance, connected to base
RB
10 kΩ
Resistance between emitter and base
RE-B
10 kΩ10 kΩ(not set)(not set)