DTA123EET1G

DTA123, DTA123EET1, DTA123EET1G, DTA123EETL, DTA123EKAT146, DTA123EM3T5G, DTA123EMT2L, DTA123EUAT106, DTA123JCA-TP, DTA123JET1, DTA123JET1G, DTA123JETL, DTA123JE-TP, DTA123JKAT146, DTA123JKA-TP, DTA123JM3T5G, DTA123JMT2L, DTA123JUAT106, DTA123JUA-TP, DTA123YETL, DTA123YKAT146, DTA123YUAT106

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Description

Parameters

ParameterDTA123EET1DTA123EET1GDTA123EETLDTA123EKAT146DTA123EM3T5GDTA123EMT2LDTA123EUAT106DTA123JCA-TPDTA123JET1DTA123JET1GDTA123JETLDTA123JE-TPDTA123JKAT146DTA123JKA-TPDTA123JM3T5GDTA123JMT2LDTA123JUAT106DTA123JUA-TPDTA123YETLDTA123YKAT146DTA123YUAT106
IC package
Package
SC-75-3, SOT-416, EMT3, 3-SSMiniSC-75-3, SOT-416, EMT3, 3-SSMiniSC-75-3, SOT-416, EMT3, 3-SSMiniSC-59-3, SMT3, SOT-346, TO-236SOT-723VMT3SC-70-3, SOT-323-3SOT-23SC-75-3, SOT-416, EMT3, 3-SSMiniSC-75-3, SOT-416, EMT3, 3-SSMiniSC-75-3, SOT-416, EMT3, 3-SSMiniSOT-523SC-59-3, SMT3, SOT-346, TO-236SOT-23-3, TO-236-3, Micro3™, SSD3, SST3SOT-723VMT3SC-70-3, SOT-323-3SOT-323SC-75-3, SOT-416, EMT3, 3-SSMiniSC-59-3, SMT3, SOT-346, TO-236SC-70-3, SOT-323-3
Manufacturer
Manufacturer
ON SemiconductorON SemiconductorRohm SemiconductorRohm SemiconductorON SemiconductorRohm SemiconductorRohm SemiconductorMicro Commercial CoON SemiconductorON SemiconductorRohm SemiconductorMicro Commercial CoRohm SemiconductorMicro Commercial CoON SemiconductorRohm SemiconductorRohm SemiconductorMicro Commercial CoRohm SemiconductorRohm SemiconductorRohm Semiconductor
Type of mounting a component on a board/circuit
Mount
Surface mount
Continuous collector current
IC
<100 mA
Voltage between the collector and the emitter of the transistor with an open base circuit and a given emitter current
UCEO
<50 V
Constant power dissipated on the transistor collector
PC
<200 mW<200 mW<150 mW<200 mW<600 mW<150 mW<200 mW<200 mW<200 mW<200 mW<150 mW<150 mW<200 mW<200 mW<260 mW<150 mW<200 mW<200 mW<150 mW<200 mW<200 mW
Static current transfer coefficient of bipolar transistor
hFE
>15Ic, Vce = 5mA, 10V>15Ic, Vce = 5mA, 10V>20Ic, Vce = 20mA, 5V>20Ic, Vce = 20mA, 5V>8Ic, Vce = 5mA, 10V>20Ic, Vce = 20mA, 5V>20Ic, Vce = 20mA, 5V>80Ic, Vce = 10mA, 5V>80Ic, Vce = 5mA, 10V>80Ic, Vce = 5mA, 10V>80Ic, Vce = 10mA, 5V>80Ic, Vce = 10mA, 5V>80Ic, Vce = 10mA, 5V>80Ic, Vce = 10mA, 5V>8Ic, Vce = 5mA, 10V>80Ic, Vce = 10mA, 5V>80Ic, Vce = 10mA, 5V>80Ic, Vce = 10mA, 5V>33Ic, Vce = 10mA, 5V>33Ic, Vce = 10mA, 5V>33Ic, Vce = 10mA, 5V
Saturation voltage between collector and emitter of transistor
UCE-sat
<250 mVIb, Ic = 300µA, 10mA<250 mVIb, Ic = 300µA, 10mA<300 mVIb, Ic = 500µA, 10mA<300 mVIb, Ic = 500µA, 10mA<250 mVIb, Ic = 300µA, 10mA<300 mVIb, Ic = 500µA, 10mA<300 mVIb, Ic = 500µA, 10mA<300 mVIb, Ic = 250µA, 5mA<250 mVIb, Ic = 300µA, 10mA<250 mVIb, Ic = 300µA, 10mA<300 mVIb, Ic = 250µA, 5mA<300 mVIb, Ic = 250µA, 5mA<300 mVIb, Ic = 250µA, 5mA<300 mVIb, Ic = 250µA, 5mA<250 mVIb, Ic = 300µA, 10mA<300 mVIb, Ic = 250µA, 5mA<300 mVIb, Ic = 250µA, 5mA<300 mVIb, Ic = 250µA, 5mA<300 mVIb, Ic = 500µA, 10mA<300 mVIb, Ic = 500µA, 10mA<300 mVIb, Ic = 500µA, 10mA
Limit frequency of current transfer coefficient of a bipolar transistor
fh21
(not set)(not set)<250 MHz<250 MHz(not set)<250 MHz<250 MHz<250 MHz(not set)(not set)<250 MHz<250 MHz<250 MHz<250 MHz(not set)<250 MHz<250 MHz<250 MHz<250 MHz<250 MHz<250 MHz
Bipolar transistor structure
Structure
PNP Pre-Biased
Collector cutoff current
Ifrc
500 nA500 nA(not set)(not set)500 nA(not set)(not set)(not set)500 nA500 nA(not set)(not set)(not set)(not set)500 nA(not set)(not set)(not set)(not set)(not set)(not set)
Resistance, connected to base
RB
2.2 kΩ
Resistance between emitter and base
RE-B
2.2 kΩ2.2 kΩ2.2 kΩ2.2 kΩ2.2 kΩ2.2 kΩ2.2 kΩ105 Ω47 kΩ47 kΩ105 Ω105 Ω105 Ω105 Ω47 kΩ105 Ω105 Ω47 kΩ489 Ω489 Ω489 Ω