DTA115

DTA115, DTA115EET1, DTA115EET1G, DTA115EETL, DTA115EKAT146, DTA115EM3T5G, DTA115EMT2L, DTA115ESATP, DTA115EUAT106, DTA115GKAT146, DTA115GUAT106, DTA115TKAT146, DTA115TUAT106

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Description

Parameters

ParameterDTA115EET1DTA115EET1GDTA115EETLDTA115EKAT146DTA115EM3T5GDTA115EMT2LDTA115ESATPDTA115EUAT106DTA115GKAT146DTA115GUAT106DTA115TKAT146DTA115TUAT106
IC package
Package
SC-75-3, SOT-416, EMT3, 3-SSMiniSC-75-3, SOT-416, EMT3, 3-SSMiniSC-75-3, SOT-416, EMT3, 3-SSMiniSC-59-3, SMT3, SOT-346, TO-236SOT-723VMT3SC-72-3, SPTSC-70-3, SOT-323-3SC-59-3, SMT3, SOT-346, TO-236SC-70-3, SOT-323-3SC-59-3, SMT3, SOT-346, TO-236SC-70-3, SOT-323-3
Manufacturer
Manufacturer
ON SemiconductorON SemiconductorRohm SemiconductorRohm SemiconductorON SemiconductorRohm SemiconductorRohm SemiconductorRohm SemiconductorRohm SemiconductorRohm SemiconductorRohm SemiconductorRohm Semiconductor
Type of mounting a component on a board/circuit
Mount
Surface mountSurface mountSurface mountSurface mountSurface mountSurface mountThrough-holeSurface mountSurface mountSurface mountSurface mountSurface mount
Continuous collector current
IC
<100 mA
Voltage between the collector and the emitter of the transistor with an open base circuit and a given emitter current
UCEO
<50 V
Constant power dissipated on the transistor collector
PC
<200 mW<200 mW<150 mW<200 mW<600 mW<150 mW<300 mW<200 mW<200 mW<200 mW<200 mW<200 mW
Static current transfer coefficient of bipolar transistor
hFE
>35Ic, Vce = 5mA, 10V>35Ic, Vce = 5mA, 10V>82Ic, Vce = 5mA, 5V>82Ic, Vce = 5mA, 5V>80Ic, Vce = 5mA, 10V>82Ic, Vce = 5mA, 5V>82Ic, Vce = 5mA, 5V>82Ic, Vce = 5mA, 5V>82Ic, Vce = 5mA, 5V>82Ic, Vce = 5mA, 5V>100Ic, Vce = 1mA, 5V>100Ic, Vce = 1mA, 5V
Saturation voltage between collector and emitter of transistor
UCE-sat
<250 mVIb, Ic = 300µA, 10mA<250 mVIb, Ic = 300µA, 10mA<300 mVIb, Ic = 250µA, 5mA<300 mVIb, Ic = 250µA, 5mA(not set)<300 mVIb, Ic = 250µA, 5mA<300 mVIb, Ic = 250µA, 5mA<300 mVIb, Ic = 250µA, 5mA<300 mVIb, Ic = 250µA, 5mA<300 mVIb, Ic = 250µA, 5mA<300 mVIb, Ic = 100µA, 1mA<300 mVIb, Ic = 100µA, 1mA
Limit frequency of current transfer coefficient of a bipolar transistor
fh21
(not set)(not set)<250 MHz<250 MHz(not set)<250 MHz<250 MHz<250 MHz<250 MHz<250 MHz<250 MHz<250 MHz
Bipolar transistor structure
Structure
PNP Pre-Biased
Collector cutoff current
Ifrc
500 nA500 nA(not set)(not set)500 nA(not set)(not set)(not set)(not set)(not set)(not set)(not set)
Resistance, connected to base
RB
100 kΩ
Resistance between emitter and base
RE-B
100 kΩ100 kΩ100 kΩ100 kΩ100 kΩ100 kΩ100 kΩ100 kΩ(not set)(not set)(not set)(not set)