DTA113

DTA113, DTA113TKAT146, DTA113ZETL, DTA113ZKAT146, DTA113ZSATP, DTA113ZUAT106

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Description

Parameters

ParameterDTA113TKAT146DTA113ZETLDTA113ZKAT146DTA113ZSATPDTA113ZUAT106
IC package
Package
SC-59-3, SMT3, SOT-346, TO-236SC-75-3, SOT-416, EMT3, 3-SSMiniSC-59-3, SMT3, SOT-346, TO-236SC-72-3, SPTSC-70-3, SOT-323-3
Manufacturer
Manufacturer
Rohm Semiconductor
Type of mounting a component on a board/circuit
Mount
Surface mountSurface mountSurface mountThrough-holeSurface mount
Continuous collector current
IC
<100 mA
Voltage between the collector and the emitter of the transistor with an open base circuit and a given emitter current
UCEO
<50 V
Constant power dissipated on the transistor collector
PC
<200 mW<150 mW<200 mW<300 mW<300 mW
Static current transfer coefficient of bipolar transistor
hFE
>100Ic, Vce = 1mA, 5V>33Ic, Vce = 5mA, 5V>33Ic, Vce = 5mA, 5V>33Ic, Vce = 5mA, 5V>33Ic, Vce = 5mA, 5V
Saturation voltage between collector and emitter of transistor
UCE-sat
<300 mVIb, Ic = 250µA, 5mA<300 mVIb, Ic = 500µA, 10mA<300 mVIb, Ic = 500µA, 10mA<300 mVIb, Ic = 500µA, 10mA<300 mVIb, Ic = 500µA, 10mA
Limit frequency of current transfer coefficient of a bipolar transistor
fh21
<250 MHz<250 MHz<200 MHz<250 MHz<250 MHz
Bipolar transistor structure
Structure
PNP Pre-Biased
Resistance, connected to base
RB
1 kΩ
Resistance between emitter and base
RE-B
(not set)10 kΩ10 kΩ10 kΩ10 kΩ