DDTC115ECA-7-F

DDTC115, DDTC115ECA-7, DDTC115ECA-7-F, DDTC115EE-7, DDTC115EE-7-F, DDTC115EKA-7-F, DDTC115EUA-7, DDTC115EUA-7-F, DDTC115GCA-7, DDTC115GCA-7-F, DDTC115GE-7, DDTC115GE-7-F, DDTC115GKA-7-F, DDTC115GUA-7, DDTC115GUA-7-F, DDTC115TCA-7, DDTC115TCA-7-F, DDTC115TE-7, DDTC115TE-7-F, DDTC115TKA-7-F, DDTC115TUA-7, DDTC115TUA-7-F

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Description

Parameters

ParameterDDTC115ECA-7DDTC115ECA-7-FDDTC115EE-7DDTC115EE-7-FDDTC115EKA-7-FDDTC115EUA-7DDTC115EUA-7-FDDTC115GCA-7DDTC115GCA-7-FDDTC115GE-7DDTC115GE-7-FDDTC115GKA-7-FDDTC115GUA-7DDTC115GUA-7-FDDTC115TCA-7DDTC115TCA-7-FDDTC115TE-7DDTC115TE-7-FDDTC115TKA-7-FDDTC115TUA-7DDTC115TUA-7-F
IC package
Package
SOT-23-3, TO-236-3, Micro3™, SSD3, SST3SOT-23-3, TO-236-3, Micro3™, SSD3, SST3SOT-523SOT-523SC-59-3, SMT3, SOT-346, TO-236SC-70-3, SOT-323-3SC-70-3, SOT-323-3SOT-23-3, TO-236-3, Micro3™, SSD3, SST3SOT-23-3, TO-236-3, Micro3™, SSD3, SST3SOT-523SOT-523SC-59-3, SMT3, SOT-346, TO-236SC-70-3, SOT-323-3SC-70-3, SOT-323-3SOT-23-3, TO-236-3, Micro3™, SSD3, SST3SOT-23-3, TO-236-3, Micro3™, SSD3, SST3SOT-523SOT-523SC-70-3, SOT-323-3SC-70-3, SOT-323-3SC-70-3, SOT-323-3
Manufacturer
Manufacturer
Diodes Inc
Type of mounting a component on a board/circuit
Mount
Surface mount
Continuous collector current
IC
<100 mA<100 mA<20 mA<20 mA<100 mA<100 mA<100 mA<100 mA<100 mA<100 mA<100 mA<100 mA<100 mA<100 mA<100 mA<100 mA<100 mA<100 mA<100 mA<100 mA<100 mA
Voltage between the collector and the emitter of the transistor with an open base circuit and a given emitter current
UCEO
<50 V
Constant power dissipated on the transistor collector
PC
<200 mW<200 mW<150 mW<150 mW<200 mW<200 mW<200 mW<200 mW<200 mW<150 mW<150 mW<200 mW<200 mW<200 mW<200 mW<200 mW<150 mW<150 mW<200 mW<200 mW<200 mW
Static current transfer coefficient of bipolar transistor
hFE
>82Ic, Vce = 5mA, 5V>82Ic, Vce = 5mA, 5V>82Ic, Vce = 5mA, 5V>82Ic, Vce = 5mA, 5V>82Ic, Vce = 5mA, 5V>82Ic, Vce = 5mA, 5V>82Ic, Vce = 5mA, 5V>82Ic, Vce = 5mA, 5V>82Ic, Vce = 5mA, 5V>82Ic, Vce = 5mA, 5V>82Ic, Vce = 5mA, 5V>82Ic, Vce = 5mA, 5V>82Ic, Vce = 5mA, 5V>82Ic, Vce = 5mA, 5V>100Ic, Vce = 1mA, 5V>100Ic, Vce = 1mA, 5V>100Ic, Vce = 1mA, 5V>100Ic, Vce = 1mA, 5V>100Ic, Vce = 1mA, 5V>100Ic, Vce = 1mA, 5V>100Ic, Vce = 1mA, 5V
Saturation voltage between collector and emitter of transistor
UCE-sat
<300 mVIb, Ic = 250µA, 5mA<300 mVIb, Ic = 250µA, 5mA<300 mVIb, Ic = 250µA, 5mA<300 mVIb, Ic = 250µA, 5mA<300 mVIb, Ic = 250µA, 5mA<300 mVIb, Ic = 250µA, 5mA<300 mVIb, Ic = 250µA, 5mA<300 mVIb, Ic = 500µA, 10mA<300 mVIb, Ic = 500µA, 10mA<300 mVIb, Ic = 500µA, 10mA<300 mVIb, Ic = 500µA, 10mA<300 mVIb, Ic = 500µA, 10mA<300 mVIb, Ic = 500µA, 10mA<300 mVIb, Ic = 500µA, 10mA<300 mVIb, Ic = 100µA, 1mA<300 mVIb, Ic = 100µA, 1mA<300 mVIb, Ic = 100µA, 1mA<300 mVIb, Ic = 100µA, 1mA<300 mVIb, Ic = 100µA, 1mA<300 mVIb, Ic = 100µA, 1mA<300 mVIb, Ic = 100µA, 1mA
Limit frequency of current transfer coefficient of a bipolar transistor
fh21
<250 MHz
Bipolar transistor structure
Structure
NPN Pre-Biased
Resistance, connected to base
RB
100 kΩ100 kΩ(not set)(not set)100 kΩ100 kΩ100 kΩ(not set)(not set)(not set)(not set)(not set)(not set)(not set)100 kΩ100 kΩ100 kΩ100 kΩ100 kΩ100 kΩ100 kΩ
Resistance between emitter and base
RE-B
100 kΩ100 kΩ100 kΩ100 kΩ100 kΩ100 kΩ100 kΩ100 kΩ100 kΩ100 kΩ100 kΩ100 kΩ100 kΩ100 kΩ(not set)(not set)(not set)(not set)(not set)(not set)(not set)