DDTC113

DDTC113, DDTC113TCA-7, DDTC113TCA-7-F, DDTC113TE-7, DDTC113TE-7-F, DDTC113TKA-7-F, DDTC113TLP-7, DDTC113TUA-7, DDTC113TUA-7-F, DDTC113ZCA-7, DDTC113ZCA-7-F, DDTC113ZE-7, DDTC113ZE-7-F, DDTC113ZKA-7-F, DDTC113ZUA-7, DDTC113ZUA-7-F

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Description

Parameters

ParameterDDTC113TCA-7DDTC113TCA-7-FDDTC113TE-7DDTC113TE-7-FDDTC113TKA-7-FDDTC113TLP-7DDTC113TUA-7DDTC113TUA-7-FDDTC113ZCA-7DDTC113ZCA-7-FDDTC113ZE-7DDTC113ZE-7-FDDTC113ZKA-7-FDDTC113ZUA-7DDTC113ZUA-7-F
IC package
Package
SOT-23-3, TO-236-3, Micro3™, SSD3, SST3SOT-23-3, TO-236-3, Micro3™, SSD3, SST3SOT-523SOT-523SC-59-3, SMT3, SOT-346, TO-2363-DFNSC-70-3, SOT-323-3SC-70-3, SOT-323-3SOT-23-3, TO-236-3, Micro3™, SSD3, SST3SOT-23-3, TO-236-3, Micro3™, SSD3, SST3SOT-523SOT-523SC-59-3, SMT3, SOT-346, TO-236SC-70-3, SOT-323-3SC-70-3, SOT-323-3
Manufacturer
Manufacturer
Diodes Inc
Type of mounting a component on a board/circuit
Mount
Surface mount
Continuous collector current
IC
<100 mA
Voltage between the collector and the emitter of the transistor with an open base circuit and a given emitter current
UCEO
<50 V
Constant power dissipated on the transistor collector
PC
<200 mW<200 mW<150 mW<150 mW<200 mW<250 mW<200 mW<200 mW<200 mW<200 mW<150 mW<150 mW<200 mW<200 mW<200 mW
Static current transfer coefficient of bipolar transistor
hFE
>100Ic, Vce = 1mA, 5V>100Ic, Vce = 1mA, 5V>100Ic, Vce = 1mA, 5V>100Ic, Vce = 1mA, 5V>100Ic, Vce = 1mA, 5V>100Ic, Vce = 1mA, 5V>100Ic, Vce = 1mA, 5V>100Ic, Vce = 1mA, 5V>33Ic, Vce = 5mA, 5V>33Ic, Vce = 5mA, 5V>33Ic, Vce = 5mA, 5V>33Ic, Vce = 5mA, 5V>33Ic, Vce = 5mA, 5V>33Ic, Vce = 5mA, 5V>33Ic, Vce = 5mA, 5V
Saturation voltage between collector and emitter of transistor
UCE-sat
<300 mVIb, Ic = 1mA, 10mA<300 mVIb, Ic = 1mA, 10mA<300 mVIb, Ic = 1mA, 10mA<300 mVIb, Ic = 1mA, 10mA<300 mVIb, Ic = 1mA, 10mA<250 mVIb, Ic = 2.5mA, 50mA<300 mVIb, Ic = 1mA, 10mA<300 mVIb, Ic = 1mA, 10mA<300 mVIb, Ic = 500µA, 10mA<300 mVIb, Ic = 500µA, 10mA<300 mVIb, Ic = 500µA, 10mA<300 mVIb, Ic = 500µA, 10mA<300 mVIb, Ic = 500µA, 5mA<300 mVIb, Ic = 500µA, 10mA<300 mVIb, Ic = 500µA, 10mA
Limit frequency of current transfer coefficient of a bipolar transistor
fh21
<250 MHz
Bipolar transistor structure
Structure
NPN Pre-Biased
Resistance, connected to base
RB
1 kΩ
Resistance between emitter and base
RE-B
(not set)(not set)(not set)(not set)(not set)(not set)(not set)(not set)10 kΩ10 kΩ10 kΩ10 kΩ10 kΩ10 kΩ10 kΩ