DDTB143

DDTB143, DDTB143EC-7-F, DDTB143EU-7-F, DDTB143TC-7-F, DDTB143TU-7-F

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Description

Parameters

ParameterDDTB143EC-7-FDDTB143EU-7-FDDTB143TC-7-FDDTB143TU-7-F
IC package
Package
SOT-23-3, TO-236-3, Micro3™, SSD3, SST3SC-70-3, SOT-323-3SOT-23-3, TO-236-3, Micro3™, SSD3, SST3SC-70-3, SOT-323-3
Manufacturer
Manufacturer
Diodes Inc
Type of mounting a component on a board/circuit
Mount
Surface mount
Continuous collector current
IC
<500 mA
Voltage between the collector and the emitter of the transistor with an open base circuit and a given emitter current
UCEO
<50 V
Constant power dissipated on the transistor collector
PC
<200 mW
Static current transfer coefficient of bipolar transistor
hFE
>100Ic, Vce = 5mA, 5V>47Ic, Vce = 50mA, 5V>100Ic, Vce = 5mA, 5V>100Ic, Vce = 5mA, 5V
Saturation voltage between collector and emitter of transistor
UCE-sat
<300 mVIb, Ic = 2.5mA, 50mA
Limit frequency of current transfer coefficient of a bipolar transistor
fh21
<200 MHz
Bipolar transistor structure
Structure
PNP Pre-Biased
Resistance, connected to base
RB
4.7 kΩ2.2 kΩ4.7 kΩ4.7 kΩ
Resistance between emitter and base
RE-B
(not set)2.2 kΩ(not set)(not set)