BCR148E6327

BCR148, BCR148B6327, BCR148E6327, BCR148E6433, BCR148FB6327, BCR148FE6327, BCR148L3E6327, BCR148TE6327, BCR148WE6327

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Description

Parameters

ParameterBCR148B6327BCR148E6327BCR148E6433BCR148FB6327BCR148FE6327BCR148L3E6327BCR148TE6327BCR148WE6327
IC package
Package
SOT-23SOT-23SOT-23TSFP-3TSFP-3TSLP-3-4SC-75SOT-323
Manufacturer
Manufacturer
Infineon Technologies
Type of mounting a component on a board/circuit
Mount
Surface mount
Continuous collector current
IC
<70 mA<70 mA<100 mA<70 mA<70 mA<70 mA<70 mA<70 mA
Voltage between the collector and the emitter of the transistor with an open base circuit and a given emitter current
UCEO
<50 V
Constant power dissipated on the transistor collector
PC
<250 mW<250 mW<200 mW<250 mW<250 mW<250 mW<250 mW<250 mW
Static current transfer coefficient of bipolar transistor
hFE
>70Ic, Vce = 5mA, 5V
Saturation voltage between collector and emitter of transistor
UCE-sat
<300 mVIb, Ic = 500µA, 10mA
Limit frequency of current transfer coefficient of a bipolar transistor
fh21
<100 MHz
Bipolar transistor structure
Structure
NPN Pre-Biased
Resistance, connected to base
RB
47 kΩ
Resistance between emitter and base
RE-B
47 kΩ