BCR116E6327

BCR116, BCR116E6327, BCR116E6433, BCR116FE6327, BCR116L3E6327, BCR116TE6327, BCR116WE6327

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Description

Parameters

ParameterBCR116E6327BCR116E6433BCR116FE6327BCR116L3E6327BCR116TE6327BCR116WE6327
IC package
Package
SOT-23SOT-23TSFP-3TSFP-3SC-75SOT-323
Manufacturer
Manufacturer
Infineon Technologies
Type of mounting a component on a board/circuit
Mount
Surface mount
Continuous collector current
IC
<100 mA
Voltage between the collector and the emitter of the transistor with an open base circuit and a given emitter current
UCEO
<50 V
Constant power dissipated on the transistor collector
PC
<200 mW<200 mW<250 mW<250 mW<250 mW<250 mW
Static current transfer coefficient of bipolar transistor
hFE
>70Ic, Vce = 5mA, 5V
Saturation voltage between collector and emitter of transistor
UCE-sat
<300 mVIb, Ic = 500µA, 10mA
Limit frequency of current transfer coefficient of a bipolar transistor
fh21
<150 MHz
Bipolar transistor structure
Structure
NPN Pre-Biased
Resistance, connected to base
RB
4.7 kΩ
Resistance between emitter and base
RE-B
47 kΩ