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| Parameter | BCR108B6327 | BCR108E6327 | BCR108E6433 | BCR108FE6327 | BCR108L3E6327 | BCR108TE6327 | BCR108WE6327 | |
|---|---|---|---|---|---|---|---|---|
IC package | Package | SOT-23 | SOT-23 | SOT-23 | TSFP-3 | TSLP-3-4 | SC-75 | SOT-323 |
Manufacturer | Manufacturer | Infineon Technologies | ||||||
Type of mounting a component on a board/circuit | Mount | Surface mount | ||||||
Continuous collector current | IC | <100 mA | ||||||
Voltage between the collector and the emitter of the transistor with an open base circuit and a given emitter current | UCEO | <50 V | ||||||
Constant power dissipated on the transistor collector | PC | <200 mW | <200 mW | <200 mW | <250 mW | <250 mW | <250 mW | <250 mW |
Static current transfer coefficient of bipolar transistor | hFE | >70Ic, Vce = 5mA, 5V | >70Ic, Vce = 5mA, 5V | >70Ic, Vce = 5mA, 5V | >70Ic, Vce = 5mA, 5V | >70Ic, Vce = 5mA, 5V | >71Ic, Vce = 5mA, 5V | >70Ic, Vce = 5mA, 5V |
Saturation voltage between collector and emitter of transistor | UCE-sat | <300 mVIb, Ic = 500µA, 10mA | ||||||
Limit frequency of current transfer coefficient of a bipolar transistor | fh21 | <170 MHz | ||||||
Bipolar transistor structure | Structure | NPN Pre-Biased | ||||||
Resistance, connected to base | RB | 2.2 kΩ | ||||||
Resistance between emitter and base | RE-B | 47 kΩ | ||||||