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| Parameter | PBSS5350SS,115 | |
|---|---|---|
IC package | Package | 8-SOIC (3.9мм ширина) |
Manufacturer | Manufacturer | NXP Semiconductors |
Type of mounting a component on a board/circuit | Mount | Surface mount |
Continuous collector current | IC | <2.7 A |
Voltage between the collector and the emitter of the transistor with an open base circuit and a given emitter current | UCEO | <50 V |
Constant power dissipated on the transistor collector | PC | <750 mW |
Static current transfer coefficient of bipolar transistor | hFE | >200Ic, Vce = 500mA, 2V |
Saturation voltage between collector and emitter of transistor | UCE-sat | <180 mVIb, Ic = 50mA, 1A |
Bipolar transistor structure | Structure | PNP |
Collector cutoff current | Ifrc | <100 nA |
Number of elements of the same type in single chip | Elements | 2 |