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| Parameter | NST847BDP6T5G | NST847BPDP6T5G | |
|---|---|---|---|
IC package | Package | SOT-963 | |
Manufacturer | Manufacturer | ON Semiconductor | |
Type of mounting a component on a board/circuit | Mount | Surface mount | |
Continuous collector current | IC | <100 mA | |
Voltage between the collector and the emitter of the transistor with an open base circuit and a given emitter current | UCEO | <45 V | |
Constant power dissipated on the transistor collector | PC | <350 mW | |
Static current transfer coefficient of bipolar transistor | hFE | >200Ic, Vce = 2mA, 5V | >200.22Ic, Vce = 2mA, 5V |
Saturation voltage between collector and emitter of transistor | UCE-sat | <600 mVIb, Ic = 5mA, 100mA | (not set) |
Limit frequency of current transfer coefficient of a bipolar transistor | fh21 | <100 MHz | |
Bipolar transistor structure | Structure | NPN | NPN+PNP |
Number of elements of the same type in single chip | Elements | 2 | |