EMZ1DXV6T1

EMZ1DXV6, EMZ1DXV6T1, EMZ1DXV6T1G, EMZ1DXV6T5, EMZ1DXV6T5G

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Description

Parameters

ParameterEMZ1DXV6T1EMZ1DXV6T1GEMZ1DXV6T5EMZ1DXV6T5G
IC package
Package
SOT-563
Manufacturer
Manufacturer
ON Semiconductor
Type of mounting a component on a board/circuit
Mount
Surface mount
Continuous collector current
IC
<100 mA
Voltage between the collector and the emitter of the transistor with an open base circuit and a given emitter current
UCEO
<60 V
Constant power dissipated on the transistor collector
PC
<500 mW
Static current transfer coefficient of bipolar transistor
hFE
>120Ic, Vce = 1mA, 6V
Bipolar transistor structure
Structure
NPN+PNP
Number of elements of the same type in single chip
Elements
2